2014. 3. 31 1/2 semiconductor technical data kdv215e revision no : 4 tv tuning. features h high capacitance ratio : c2v/c25v=6.5(typ.) h low series resistance : r s =0.4 ? (typ.) h excellent c-v characteristics, and small tracking error. h useful for small size tuner. maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 30 v peak reverse voltage v rm 35(r l =10k ? ) v junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? type name marking a t electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 10 na reverse current i r v r =30v, (ta=60 ? ) - - 100 na capacitance c 2v v r =2v, f=1mhz 14.16 - 16.25 pf capacitance c 25v v r =25v, f=1mhz 2.11 - 2.43 pf capacitance ratio c 2v /c 25v 5.90 6.50 7.15 - series resistance r s v r =5v, f=470mhz - 0.4 0.55 ? c(max.)-c(min.) " 0.02 c(min.) (v r =2~25v) note : available in matched group for capacitance to 2.0%.
2014. 3. 31 2/2 kdv215e revision no : 4 c - v r reverse voltage v (v) 04 t capacitance c (pf) 8 12 16 20 24 tr 1 10 3 30 5 50 100 f=1mhz ta=25 c r - v r reverse voltage v (v) 131030 0 series resistance r ( ? ) r 5 f=470mhz ta=25 c s s 0.2 0.4 0.6 0.8 -40 ambient temperature ta ( c) c - ta -2 capacitance change ratio c (%) -20 0 20 40 60 80 -1 0 1 2 3 f=1mhz v =2v r 14 20 25 note : c(%) = 100 c ( 25 ) c(ta) - c(25) 28
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